gas doping
英 [ɡæs ˈdəʊpɪŋ]
美 [ɡæs ˈdoʊpɪŋ]
网络 气相
双语例句
- Said doping gas control part includes a gas quality flowmeter ( of argon and azote) used by a gas protect part, and a doping case part.
所述的掺杂气体控制部分包气体保护部分使用的氩气、氮气的气体质量流量计及掺杂箱部分； - Improvement of Gas Sensing-characteristics of Formaldehyde Gas Sensor by Doping
掺杂对甲醛气敏元件气敏特性的改善 - Calculating method of fz-silicon gas doping
Fz硅气相掺杂（GGD）的计算方法 - Effect of HCl gas doping on the conductivity of polyaniline
HCl气相掺杂对聚苯胺电导率影响规律的探讨 - A method to control and monitor the concentration of S doped in GaP green LED with double n-type construction in the gas phase doping during the LPE process is reported. And the effect of the concentration on luminescent efficiency is studied.
报道了具有双n型结构的GaP绿色发光二极管在汽相掺杂、液相外延过程中，对硫（S）掺杂浓度的控制和监测方法，并研究了掺S浓度对发光效率的影响。 - The investigation on the gas phase doping epitaxial growth of GaN
气相外延氮化镓掺杂生长的研究 - This paper, heating type gas sensers had been made using doping ion and WO_3 semiconductor thick film. Combining TPD and semiconductor analysis, studied the effect to characteristic of O_3 Sensors.
在WO3中掺入杂质离子，制成傍热式厚膜元件，结合开温脱附（TPD）和半导体分析，研究了掺杂离子对元件性能的影响。 - Recent Development on the Applications of Gas Chromatography-High Resolution Mass Spectrometry ( GC-HRMS) to Doping Analysis
气相色谱（GC）&高分辨质谱（HRMS）联用在兴奋剂检测中的应用 - Firstly, high-quality a-Si films are prepared using PECVD. Resistivity of a-Si film is well controlled by gas doping.
论文首先研究了采用PECVD制备高品质a-Si薄膜的工艺，通过气相掺杂有效地调整了薄膜电阻率； - Hydrothermal Preparation of Zn_2SnO_4 Gas Sensing Materials and Its Properties Modification by Doping Metal Oxide
Zn2SnO4气敏材料的水热合成及其掺杂改性 - Effect of different protection gas and Addition of Fe~ ( 2+) was similar to that with Pt doping.
比较不同保护气和添加Fe~（2+）时，与载Pt催化剂效果较一致。 - In order to improve gas-sensing properties of ZnFe_2O_4 gas sensors, doping was used in gas sensitive materials.
为了改善ZnFe2O4的气敏性能，对其进行掺杂。 - Studies on gas sensitive materials of r-fe_2o_3 doping transition metal oxides
过渡金属氧化物掺杂r-Fe2O3气敏材料研究 - Phosphine ( PH3) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition ( CVD) etc.
磷化氢（PH3）是一种重要的电子特气，主要用于n型半导体的掺杂、离子注入和化学气相沉积（CVD）等。 - SnO_2-based CO Gas Sensor Material: Preparation and Doping
SnO2基CO气敏材料的制备与掺杂研究 - Research on Floating Zone Gas Doping of Silicon
硅区熔气相掺杂工艺的研究 - For the instability of metal oxide thin film gas sensor in doping process, a practical ZnO thin-film gas sensing basic material was developed.
针对金属氧化物薄膜气敏元件传统制造工艺中存在的掺杂不稳问题，开发了一种实用化的ZnO薄膜气敏基材料。 - Studies on gas sensitive materials of α-fe_2o_3 doping rare earth metal oxides
稀土掺杂α-Fe2O3气敏材料研究 - The sensitivity of nano thin film gas sensor to hydrogen sulfide could be affected by the doping amount of P-type metal oxides.
P型金属氧化物半导体的掺杂量会影响纳米薄膜气敏元件对硫化氢的灵敏度。 - Single crystal with gas doping has the characters of less crystal lattice damage, higher lifetime of minority carrier, shorter production cycle time, higher doping yield and lower cost. With rapid development of Power Electronics device, FZ Si single crystal business demand increases sharply.
汽相掺杂单晶具有晶格损伤小、少子寿命高、生产周期短、掺杂命中率高及生产成本低等特点，随着电力电子器件快速发展，市场需求急剧增加。 - ZnO film, a semiconductor with wide direct band gap, has been actively studied because of its potential applications. It can be used in solar cell, piezoelectric device, photoelectric device, gas sensor and UV detector and the characteristics can be modulated by appropriate doping.
ZnO薄膜是一种直接宽带隙半导体材料，具有多种用途，可广泛的应用于太阳能电池、压电薄膜、光电器件、气敏器件和紫外探测器等方面。